The Government of Odisha has approved fiscal support for Phase 1 of RIR Power Electronics Limited’s upcoming silicon carbide (SiC) semiconductor manufacturing facility in Bhubaneswar. The total project cost across both phases is estimated at approximately INR 6.18 billion, with Phase 1 involving a capital expenditure of about INR 650 million.
The project had earlier received clearance from the State-Level Single Window Clearance Committee (SLSWCC) and the state cabinet during the previous fiscal year. The eligible capital subsidy from the state government for Phase 1 is approximately INR 320 million.
“We extend our sincere gratitude to the Government of Odisha for their forward-thinking support in bringing this first-of-its-kind SiC semiconductor facility to life. Their backing empowers us to introduce advanced technologies and modern manufacturing capabilities to the state,” said Harshad Mehta, Chairman & Director of RIR Power Electronics Limited. “This development lays a strong foundation for innovation, employment generation, and energy-efficient solutions in electric vehicles, renewables, power electronics, and industrial automation across India.”
The facility will manufacture high-power SiC MOSFETs, IGBTs, and diodes across voltage ranges from 3.3 kV to 20 kV. Target application sectors include electric vehicles (EVs), renewable energy systems, the power grid, and industrial automation.
RIR Power Electronics Limited operates in the power electronics and semiconductor sector, focusing on the production of high-performance semiconductor devices.