RIR Power Electronics plans to establish a silicon carbide (SiC) semiconductor manufacturing facility in Odisha, with production expected to begin in December 2025. The project involves an investment of INR 618 crore and will focus on producing epitaxy wafers and high-power SiC devices such as MOSFETs and diodes ranging from 3.3 kilovolts to 20 kilovolts.
According to a press release issued, the facility is part of the first phase of a broader manufacturing initiative and will cater to sectors including electric vehicles, renewable energy, power electronics, and industrial automation.
RIR stated that the upcoming facility will manufacture SiC-based components aimed at improving energy efficiency and operational performance across various power applications.