MinebeaMitsumi signed a memorandum of understanding (MoU) with the Government of Tamil Nadu to establish a multi-functional semiconductor and advanced precision components manufacturing and research and development (R&D) facility in Tiruvallur. The facility will manufacture insulated-gate bipolar transistor (IGBT) modules and high-precision components for manufacturing and mobility applications.
The project is expected to create 1,400 employment opportunities, including 400 roles in R&D. The planned integration of production and dedicated R&D activities is aimed at strengthening capabilities in advanced design, engineering, and high-technology manufacturing within the state.
“Preparations for India plant launch are progressing smoothly,” the company stated in its Financial Results Briefing presentation dated 5 February 2026, under the two-wheel business section of the Access Solutions (AS) segment update, indicating that the planned India facility is aligned with its two-wheel mobility operations.
The proposed unit will focus on IGBT modules and precision components that support next-generation manufacturing systems and mobility ecosystems. By combining manufacturing scale with in-house R&D, the facility is intended to contribute to semiconductor supply chains connected to global markets.
The investment adds to Tamil Nadu’s semiconductor and electronics manufacturing base, with a portion of the employment generation concentrated in specialised engineering and design roles. The facility is expected to support both manufacturing operations and innovation-led product development at the Tiruvallur site.
MinebeaMitsumi operates in semiconductor and advanced precision components manufacturing.
