AGNIT Semiconductors has been awarded the Semiconductor Startup Award 2025 by the India Electronics and Semiconductor Association (IESA). The award was presented at the IESA Vision Summit 2025, held on March 6 in Gandhinagar, Gujarat.
AGNIT, incubated at the Foundation for Science Innovation and Development (FSID) at the Indian Institute of Science (IISc), focuses on Gallium Nitride (GaN) semiconductor technology. The company previously received an ELEVATE startup grant from the Government of Karnataka in 2021 for its work in this field.
At the event, AGNIT’s CEO and Co-founder, Hareesh Chandrasekar, accepted the award from Mona Khandhar, Principal Secretary (Science and Technology), Government of Gujarat. Chandrasekar noted that the company’s RF GaN devices are currently undergoing testing in customer systems.
In December 2023, AGNIT signed a memorandum of understanding (MoU) under the iDEX program with the Ministry of Defence to develop GaN-based wireless transmitters for defence applications. The Bengaluru-based startup has raised $4.87 million in funding from 3one4 Capital, Zephyr Peacock, and Lakshmi Narayanan.